Samsung, the world’s largest memory chip maker, confirmed it is developing 4F² VCT (Vertical Channel Transistor) DRAM technology as it seeks to defend its technical superiority against Chinese competitors. Chief Technology Officer and President Song Jae-hyuk answered “Yes” when asked if the company was working on the same technology during the 28th Semiconductor Exhibition (SEDEX 2026) at COEX in Gangnam-gu, Seoul, South Korea.
Chinese memory maker Changxin Memory Technology (CXMT) recently announced plans to release server DRAM using 4F² technology by the end of 2026; that announcement prompted a drop in Samsung’s share price.
4F² VCT DRAM and why it matters
Higher density is critical to meet rising demand for AI servers, but traditional DRAM is approaching its 2D scaling limit. The 4F² cell structure is viewed as the next step in DRAM evolution because it drastically reduces the physical footprint of each memory cell by constructing channels upright rather than laid out horizontally. That reduction in cell area allows manufacturers to pack more storage capacity into the same chip area.
Market response and future architectures
Samsung’s confirmation follows competitive moves from Chinese rivals and reflects industry pressure to increase density. After 4F², memory makers are expected to move toward true 3D DRAM architectures, which are anticipated to enable even greater capacity within the same area while reducing power consumption.
