Samsung memory showcased a range of advanced memory and storage chips aimed at future AI data centers, presenting products intended to deliver faster performance and improved power efficiency to enable faster AI processing. Alongside its V10 BV-NAND flash and zHBM memory concepts, the company revealed additional designs focused on both edge AI and enterprise storage.
Samsung memory concepts for AI and edge devices
The company introduced zNAND-O, its newest high-performance 3D NAND flash memory concept designed specifically for edge AI computing. zNAND-O is being developed in four-layer and eight-layer versions and aims to deliver lower latency and higher data-transfer speeds than current NAND flash chips. Its compact design could make it suitable for mobile devices — including laptops, smartphones and tablets — as well as robotics applications. In addition, Samsung showcased its LPDDR5X-PIM memory chip, which the company calls the industry’s first LPDDR memory with built-in data processing. Because processing takes place within the memory chip, Samsung says the LPDDR5X-PIM can reduce data movement and improve energy efficiency.
Enterprise SSDs shown at FMS 2026
For enterprise storage, Samsung presented the PM1763, described as a high-performance enterprise SSD, and the BM1773, which is designed for high storage capacity. Both eSSDs were showcased at the FMS 2026 expo.
